Method for forming interconnects on thin wafers

ABSTRACT

A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.

BACKGROUND OF INVENTION

1. Field of the Invention

The present invention relates to the field of semiconductor processing;more specifically, it relates to a method of forming a solderinterconnect structure on a thin wafer.

2. Background of the Invention

Increasing density of semiconductor devices has allowed semiconductorchips to decrease in area. Along with the decrease in chip area, hascome a need to make the semiconductor chips thinner. Current methods ofthinning semiconductor wafers often lead to damage of the semiconductorchips.

SUMMARY OF INVENTION

A first aspect of the present invention is a method of forming asemiconductor interconnect comprising, in the order recited: (a)providing a semiconductor wafer; (b) forming bonding pads in a terminalwiring level on the frontside of the wafer; (c) reducing the thicknessof the wafer; (d) forming solder bumps on the bonding pads; and (e)dicing the wafer into bumped semiconductor chips.

A second aspect of the present invention is a method of forming asemiconductor interconnect comprising, in the order recited: (a)providing a semiconductor wafer; (b) forming bonding pads in a terminalwiring level on the frontside of the wafer; (c) reducing the thicknessof the wafer to produce a reduced thickness wafer; (d) providing anevaporation fixture comprising a bottom ring, a shim, an evaporationmask and a top ring; (e) placing the shim into the bottom ring; (f)placing the reduced thickness wafer on the shim; (g) placing on andaligning the mask to the reduced thickness wafer; (h) placing said topring over said mask and temporarily fastening said top ring to saidbottom ring; (i) evaporating solder bumps on the bonding pads throughthe mask; (j) removing the reduced thickness wafer from the fixture; and(k) dicing the reduced thickness wafer into bumped semiconductor chips.

A third aspect of the present invention is A fixture for holding waferand an evaporative mask comprising: a bottom ring having a innerperiphery and an outer periphery, the bottom ring having a raised innerlip formed along the inner periphery and a raised outer lip formed alongthe outer periphery, the height of the inner lip above a surface of thebottom ring being greater than a height of the outer lip above thesurface of the bottom ring; a shim having a inner and an outerperiphery, the outer periphery of the shim fitting inside and inproximity to the outer lip of the bottom ring, a bottom surface of theshim proximate to the inner periphery of the shim contacting an uppersurface of the inner lip of the bottom ring; a top ring having an innerperiphery and an outer periphery, the top ring having a lower raised lipformed along the inner periphery of the bottom ring and extending belowa bottom surface of the top ring; and the bottom ring and the top ringadapted to press a bottom surface of the wafer against an upper surfaceof the shim and to press a top surface of the wafer against a bottomsurface of the mask and to press a top surface of the mask proximate tothe periphery of the mask against a lower surface of the lower raisedlip of the top ring.

BRIEF DESCRIPTION OF DRAWINGS

The features of the invention are set forth in the appended claims. Theinvention itself, however, will be best understood by reference to thefollowing detailed description of an illustrative embodiment when readin conjunction with the accompanying drawings, wherein:

FIGS. 1A through 1F are partial cross-sectional views of the fabricationof a semiconductor wafer according to the present invention;

FIG. 2 is a cross-sectional view through an interconnect structureformed by the present invention;

FIG. 3A is a top view of a base portion of a wafer to mask alignmentfixture for forming interconnects according to the present invention;

FIG. 3B is a cross-section view through line 3B-3B of FIG. 3A;

FIG. 4 is a top view of an evaporative mask portion of the wafer to maskalignment fixture for forming interconnects according to the presentinvention;

FIG. 5A is a top view of a top portion of the wafer to mask alignmentfixture for forming interconnects according to the present invention;

FIG. 5B is a cross-section view through line 5B-5B of FIG. 5A;

FIG. 6A is a top view of a shim portion of a wafer to mask alignmentfixture for forming interconnects according to the present invention;

FIG. 6B is a cross-section view through line 6B-6B of FIG. 6A;

FIG. 7 is a partial cross-section view through the assembled wafer tomask alignment fixture for forming interconnects according to thepresent invention; and

FIG. 8 is a partial cross-section view through the assembled wafer tomask alignment fixture for forming interconnects illustratingdimensional relationships between the component parts of the wafer tomask alignment fixture according to the present invention.

DETAILED DESCRIPTION

For the purposes of the present invention, the terms substrate and wafermay be used interchangeably.

FIGS. 1A through 1F are partial cross-sectional views of the fabricationof a semiconductor wafer according to the present invention. In FIG. 1A,a substrate 100 such as a semiconductor bulk silicon substrate or asemiconductor silicon-on-insulator (SOI) substrate has a thickness T1.Formed in/on substrate 100 is a multiplicity of active Field effecttransistors (FETs) 105. FETs 105 include gate electrodes 115 formed overgate dielectric formed 116 and between spacers 117 on a top surface 110of substrate 100 and source/drains 118 formed in the substrate. FETs 105are exemplary of devices and structures normally found in semiconductorcircuits of semiconductor chips and many other structures and devicessuch as capacitors, resistors, inductors, bipolar transistors anddiffused and dielectric isolation. FETs 105 are wired into circuits in afirst wiring level 120A, a second wiring level 120B, a third wiringlevel 120C and a terminal wiring level 120D. First wiring level containscontacts 125 interconnecting FETs 105 to conductors 125B in secondwiring layer 120B. Conductors 125B are in turn connected to conductors125C in third wiring level 120C. Conductors 125C are in turn connectedto terminal conductors 125D in terminal wiring level 120D. Terminalconductors 125D include a multiplicity of bonding pads 130. Bonding pads130 are exposed on surface 135 of terminal wiring layer 120D. Firstwiring level 120A, second wiring level 120B, third wiring level 120C andterminal wiring level 120D are exemplary of wiring levels found insemiconductor chips and more or less wiring levels fabricated by anynumber of methods well known in the art such as subetch, liftoff,damascene and dual damascene may be used. Substrate 100 has a backsidesurface 140.

In FIG. 1B, wafer 100A is reduced from thickness T1 (see FIG. 1A) to anew thickness T2 (where T1>T2) by any number of wafer thinningtechniques well known in the art. In a first example, backside surface140 (see FIG. 1A) is ground down to a new backside surface 145 bygrinding the backside surface with a rotating diamond grindstone. In asecond example, backside surface 140 (see FIG. 1A) is etched down to newbackside surface 145 by etching the backside surface with a mixture ofhydrofluoric and nitric acids while rotating the wafer. In a thirdexample, backside surface 140 (see FIG. 1A) is lapped down to newbackside surface 145 by introducing a slurry containing abrasiveparticles between the backside of the wafer and a rotating wheel. In afourth example, backside surface 140 (see FIG. 1A) ischemical-mechanical-polished (CMP) down to new backside surface 145 byintroducing a slurry containing abrasive particles mixed with a siliconetchant solution between the backside of the wafer and a rotating wheel.

In one example of thinning, a 200 mm diameter wafer having an initialthickness T1 of about 650 to 780 microns is thinned to a new thicknessT2 of about 150 to 450 microns. The present invention may be practicedusing any diameter wafer including 100 mm, 125 mm and 300 mm wafer ofany initial thickness T1, reducing the wafer to any final thickness T2as required by the use of the finished chip.

In FIG. 1C an evaporative mask 150 having openings 155 is placed on topsurface 135 (or very close to top surface 135) of terminal wiring level120D. Openings 155 are aligned to bonding pads 130. Openings 155 haveinner knife-edges 160. Evaporative mask 150 is typical of the type ofmask used to fabricate controlled collapse chip connection (C4)interconnect structures. C4 interconnect structures are also known assolder bump interconnections. In one example, mask 150 is made frommolybdenum.

In FIG. 1D, a pad limiting metallurgy (PLM) 165 is evaporated throughopening 155 onto bonding pads 130. PLM 165 is discussed more fully infrain reference to FIG. 2. PLM is also known as ball limiting metallurgy(BLM).

In FIG. 1E, mask 150 is not moved and a solder bump 170 is evaporatedthrough opening 155 onto PLM 165. Solder bump 170 has the shape of atruncated cone.

In FIG. 1F, mask 150 (see FIG. 1E) is removed and a reflow anneal isperformed in order to reshape solder bumps 170 into semi-sphericalsolder bumps (also known as solder balls or C4 balls) 170A. Solder bumps170A are discussed more fully infra in reference to FIG. 2.

FIG. 2 is a cross-sectional view through an interconnect structureformed by the present invention. In FIG. 2, terminal wiring level 120Dincludes bonding pad 125D embedded in a dielectric layer 175. In oneexample, bonding pad 125D is aluminum, copper or alloys thereof. Formedon top of dielectric layer 175 is an optional capping layer 180. In oneexample, capping layer 180 is silicon nitride. Formed on top of cappinglayer 180 is an optional passivation layer 185. In one example,passivation layer 185 is silicon dioxide, silicon nitride, siliconoxynitride or combinations thereof. Formed on top of passivation layer185 is an optional dielectric layer 190. In one example, dielectriclayer 190 is polyimide. An optional via 195 is provided through cappinglayer 180, passivation layer 185 and dielectric layer 190 exposingbonding pad 125D in terminal wiring level 120D. Via 195 may be formed byany number of well known plasma etch techniques. PLM 165 is formed overdielectric layer 190, sidewalls of via 195 and exposed portions ofterminal wiring level 120D. In one example, PLM-165 is titanium nitride,copper, gold, titanium-tungsten, chrome, chrome-copper or combinationsthereof. A typical combination is gold over copper over chrome. Anothertypical combination is copper over chrome copper over titanium-tungsten.PLM 165 is in electrical contact with bonding pad 130. C4 ball 170A isformed on and in electrical contact with PLM 165. Examples of C4 ball170A compositions include but are not limited to 95% lead and 5% tin,97% lead and 3% tin, 100% lead, other lead alloys, 100% tin and tinalloys. In one example, the reflow anneal mentioned supra is performedat a temperature of between about 350° C. and 380

The evaporation process for forming PLMs 165 and solder bumps 170 (seeFIG. 1E) is performed by placing the semiconductor substrate in wafer tomask alignment fixture that allows alignment of mask 150 to thinnedsubstrate 100A (see FIG. 1E). The evaporation process includes loadingmultiple wafer to mask alignment fixtures (with wafers and masks and inthe case of the present invention, shims) into spaces in a dome of amulti-source evaporator and each material of PLM and then the solder padare evaporated onto contacts pads on the wafer through holes in a mask.Such a wafer to mask alignment fixture is illustrated in FIGS. 3A, 3B,4, 5A, 5B, 6A and 6B and described infra.

FIG. 3A is a top view of a base portion of a wafer to mask alignmentfixture for forming interconnects according to the present invention andFIG. 3B is a cross-section view through line 3B-3B of FIG. 3A. In FIGS.3A and 3B, a bottom ring 200 includes an outer lip 205 and an inner lip210 joined by an integral plate portion 215. Inner lip 210 defines theextent of an opening 220 centered in bottom ring 200. Plate portion 215includes a multiplicity of openings 225 and a multiplicity of retainingpost holes 227. Opening 220 provides access for a wafer handling fixture(not shown) and openings 225 are for thermal expansion and heatretention control. Bottom ring 200 has a diameter D1 and opening 220 hasa diameter D2. The inside distance between opposite points on outer lip205 is D3. Outer lip 205 has a height H1 measured from a top surface 230of plate portion 215 and inner lip 210 has a height H2 measured from thetop surface of the plate portion. The difference in height between outerlip 205 and inner lip 210 is H3 where H3=H2−H1 and H2 is greater thanH1. In one example, for an standard un-thinned 200 mm diameter waferabout 650 microns thick, H2 is about 0.080 inches and H1 is about 0.073inches, making H3 about 0.007 inches. H1 and H2 will vary based on waferdiameters and standard un-thinned wafer thickness.

FIG. 4 is a top view of an evaporative mask portion of the wafer to maskalignment fixture for forming interconnects according to the presentinvention. In FIG. 4, mask 250 includes a multiplicity of openings 255arranged in groups 260. Each group 260 corresponds to a chip on a waferthat will be placed under mask 250 as illustrated in FIG. 7 anddescribed infra. Mask 250 has a diameter of D1, the same as the diameterof bottom ring 200 illustrated in FIG. 3A and described supra. Mask 250includes a multiplicity of retaining post holes 262.

FIG. 5A is a top view of a top portion of the wafer to mask alignmentfixture for forming interconnects according to the present invention andFIG. 5B is a cross-section view through line 5B-5B of FIG. 5A. In FIGS.5A and 5B, top ring 270 has a lower lip 275 protruding from a bottomsurface 280 of the top ring. Lower ring 275 protrudes a distance H4. Inone example, for a standard 200 mm diameter wafer having a thickness ofabout 650 microns, H4 is about 0.002 inches. Top ring 270 includes anopening 280 centered within ring 270. Top ring 270 has a diameter of D1,the same as the diameter of bottom ring 200 illustrated in FIG. 3A anddescribed supra. Top ring 270 includes a multplicity of retaining posts282.

FIG. 6A is a top view of a shim portion of a wafer to mask alignmentfixture for forming interconnects according to the present invention andFIG. 6B is a cross-section view through line 6B-6B of FIG. 6A. In FIGS.6A and 6B a shim 290 has an opening 295 centered within the shim. Shim290 has a diameter D3A where D3A is just slightly smaller than D3, theinside distance between opposite points on outer lip 205 (see FIG. 3A).D3 is greater than the diameter of the wafer being held in the fixture.Opening 295 has a diameter D2 the same as the diameter of opening 220 ofbottom ring 200 illustrated in FIG. 3A and described supra. Shim 290 hasa thickness T3. Shim 290 includes a multiplicity of retaining postnotches 297 in a perimeter 298 of the shim.

FIG. 7 is a partial cross-section view through the assembled wafer tomask alignment fixture for forming interconnects according to thepresent invention. In FIG. 7, only half of the assembled fixture 300(about centerline 305) is illustrated. To load/assemble fixture 300,shim 290 is placed in bottom ring 200 (contacting inner lip 210),thinned substrate 100A is placed on shim 290, mask 250 is placed onthinned substrate 100A and top ring 270 is placed on mask 250. Mask 250is pressed between top ring 270 and outer lip 205 of bottom ring 200 andlower lip 275 of the top ring presses on mask 250. The only portion ofbottom ring 200 contacted by shim 290 is inner lip 210. Clips (notshown) hold assembled fixture 300 together. Also, alignment pins andalignment holes in bottom and top rings 200 and 270 and alignment holesin mask 250 and shim 290 are present but not illustrated in FIG. 7. Thecombination of the difference in heights between outer and inner lips205 and 210 of bottom ring 200 and the height of lower lip 275 of topring 270 deflects (or bows) shim 290, substrate 100A and mask 250 intovery shallow but semi-spherical shapes by pressing the peripheries ofmask 250 and substrate 100A towards bottom ring 200. The degree ofdeflection of substrate 100A is D4 measured along the top surface ofsubstrate 100A. The bow imparted to substrate 100A prevents or reducessuch problems associated with evaporation through an knife edge openingin a mask such as sputter haze, PLM flaring and solder pad haloing.

Retaining post 282 passes through retaining post hole 262 in mask 250,retaining post notches 297 in shim 290 and retaining post hole 227 inbottom ring 200. A spring clip 310 engages retaining post 305 andtemporarily fastens assembled fixture 300 together.

FIG. 8 is a partial cross-section view through the assembled wafer tomask alignment fixture for forming interconnects illustratingdimensional relationships between the component parts of the wafer tomask alignment fixture according to the present invention. Thedimensions H1, H2 of outer and inner lips 205 and 210 of bottom ring 200and the dimension H4 of lower lip 275 of top ring 270 (see FIG. 5A) areexperimentally determined for each combination of wafer diameter andstandard un-thinned wafer thickness. Notelit is possible that one wafermanufacturer may produce standard 200 mm diameter wafers that are 780microns thick, while another manufacturer may produce standard 200 mmdiameter wafers that are 640 microns thick. Either two sets of fixtureshaving different values of H1, H2 and H4 are required, or 640 micronthick wafers are treated as thin wafers compared to the 780 micron thickwafers and a single fixture is designed for 780 micron thick wafers.There are two methods of determining the thickness T3 for shim 290. Thefirst method is to use the formula T3 (shim thickness) equals T1(un-thinned or standard wafer thickness that fixture is designed for)minus T2 (thinned wafer thickness). For example, assume a fixturedesigned for a 200 mm diameter 640 micron thick having values of 0.073for H1, 0.080 for H2 and 0.002 for H4. If the wafer has been thinned to250 microns, then T3 will be 390 microns (640−250=390) even if theoriginal thickness of the wafer was greater than 640 microns. If thefixture had been designed for a 780 micron thick wafer than shim 290, inthe present example, would be 530 microns (720−250=530) thick.

The second method is to experimentally determine for a given thinnedwafer thickness (T2) a shim thickness (T3) that yields the same waferdeflection (D4) (see FIG. 7) as the un-thinned standard wafer (ofthickness T1) that the fixture was designed for. For example assume afixture designed for a 200 mm diameter 640 micron thick having values of0.073 for H1, 0.080 for H2 and 0.002 for H4. If the wafer has beenthinned to 250 microns, then T3 will be selected from an experimentallydetermined table of shim thickness (T3) versus thinned wafer thickness(T2) versus wafer deflection (D4) to give the same wafer deflection (D4)with a shim in place as a 640 micron thick wafer even if the originalthickness of the wafer was not equal to 640 microns.

The description of the embodiments of the present invention is givenabove for the understanding of the present invention. It will beunderstood that the invention is not limited to the particularembodiments described herein, but is capable of various modifications,rearrangements and substitutions as will now become apparent to thoseskilled in the art without departing from the scope of the invention.Therefore, it is intended that the following claims cover all suchmodifications and changes as fall within the true spirit and scope ofthe invention.

1.-24. (canceled)
 25. A fixture for holding wafer and an evaporativemask comprising: a bottom ring having a inner periphery and an outerperiphery, said bottom ring having a raised inner lip formed along saidinner periphery and a raised outer lip formed along said outerperiphery, the height of said inner lip above a surface of said bottomring being greater than a height of said outer lip above said surface ofsaid bottom ring; a shim having a inner and an outer periphery, theouter periphery of said shim fitting inside and in proximity to saidouter lip of said bottom ring, a bottom surface of said shim proximateto said inner periphery of said shim contacting an upper surface of saidinner lip of said bottom ring; a top ring having an inner periphery andan outer periphery, said top ring having a lower raised lip formed alongsaid inner periphery of said bottom ring and extending below a bottomsurface of said top ring; and said bottom ring and said top ring adaptedto press a bottom surface of said wafer against an upper surface of saidshim and to press a top surface of said wafer against a bottom surfaceof said mask and to press a top surface of said mask proximate to saidperiphery of said mask against a lower surface of said lower raised lipof said top ring.
 26. The fixture of claim 25, wherein said shim, saidtop ring and said bottom ring are adapted to impart a bow to said waferand said mask, a central part of said wafer and a central part of saidmask bowed away from said bottom ring and peripheral portions of saidwafer and said mask bowed toward said bottom ring.
 27. The fixture ofclaim 25, wherein the combined thicknesses of said wafer and said shimare substantially equal to a thickness of a standard wafer said fixtureis designed to hold without said shim being present, said standard waferhaving a thickness greater than a thickness of said wafer.
 28. Thefixture of claim 25, wherein said shim has thickness such that saidwafer is bowed the same amount as a standard thickness wafer would bebowed without said shim being present, said standard wafer having athickness greater than a thickness of said wafer.
 29. A fixture,comprising: a bottom ring having opposite top and bottom surfaces andinner and outer raised lips on said top surface; a shim having acircular opening and opposite top and bottom surfaces; a top ring havingopposite top and bottom surface surfaces; and said bottom ring and saidtop ring adapted to press said bottom surface of said shim adjacent tosaid circular opening against said inner raised lip, to press a bottomsurface of a wafer against said upper surface of said shim, to press atop surface of said wafer against a bottom surface of said mask and topress a top surface of said mask proximate to a periphery of said maskagainst said lower surface of said top ring.
 30. The fixture of claim29, wherein said shim, said top ring and said bottom ring are adapted toimpart a bow to said wafer and said mask, a central part of said waferand a central part of said mask bowed away from said bottom ring andperipheral portions of said wafer and said mask bowed toward said bottomring.
 31. The fixture of claim 29, wherein the combined thicknesses ofsaid wafer and said shim are substantially equal to a thickness of astandard wafer said fixture is designed to hold without said shim beingpresent, said standard wafer having a thickness greater than a thicknessof said wafer.
 32. The fixture of claim 29, wherein said shim hasthickness such that said wafer is bowed the same amount as a standardthickness wafer would be bowed without said shim being present, saidstandard wafer having a thickness greater than a thickness of saidwafer.
 33. The fixture of claim 29, wherein said inner raised lipextends a first distance above said top surface of said bottom ring,said outer raised lip extends a second distance above said top surfaceof said bottom ring, said first distance is greater than said seconddistance.
 34. A fixture, comprising: a bottom ring having a innerperiphery and an outer periphery, said bottom ring having a raised innerlip formed along said inner periphery and a raised outer lip formedalong said outer periphery; a shim having a inner and an outerperiphery, the outer periphery of said shim fitting inside and inproximity to said outer lip of said bottom ring, a bottom surface ofsaid shim proximate to said inner periphery of said shim contacting anupper surface of said inner lip of said bottom ring; and a top ringhaving an inner periphery and an outer periphery, said top ring having alower raised lip formed along said inner periphery of said bottom ringand extending below a bottom surface of said top ring.
 35. The fixtureof claim 34, wherein the height of said inner lip above a surface ofsaid bottom ring being greater than a height of said outer lip abovesaid surface of said bottom ring.
 36. The fixture of claim 35, whereinsaid height of said inner lip is about 0.080 inches and said height ofsaid outer lip is about 0.073 inches.
 37. The fixture of claim 34,wherein said bottom ring includes openings extending between saidsurface and an opposite surface of said bottom ring, said openinglocated between said inner and outer lips.
 38. The fixture of claim 34,wherein a thickness of said shim is equal to a difference between athickness of a standard wafer and a thickness of a standard wafer aftersaid standard wafer has been thinned.